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Title: Effects of GaN interlayer on the transport properties of lattice-matched AlInN/AlN/GaN heterostructures

We study the effects of GaN interlayer on the transport properties of two-dimensional electron gases confined in lattice-matched AlInN/AlN/GaN heterostructures. It is found that the Hall mobility is evidently enhanced when an additional ultrathin GaN interlayer is introduced between AlInN and AlN layers. The enhancement of the Hall mobility is especially remarkable at low temperature. The high Hall mobility results in a low sheet resistance of 23 Ω/◻ at 2 K. Meanwhile, Shubnikov-de Haas oscillations (SdH) are also remarkably enhanced due to the existence of GaN interlayer. The enhancement of the SdH oscillations is related to the larger quantum mobility μ{sub q} owing to the suppression of the interface roughness, alloy disorder, and ionized impurity scatterings by the GaN interlayer.
Authors:
; ;  [1] ;  [2] ;  [3]
  1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics, Tianjin University, Tianjin 300072 (China)
  2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083 (China)
  3. Physical Science and Technology College, Guangxi University, Nanning, Guangxi 530004 (China)
Publication Date:
OSTI Identifier:
22402897
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM NITRIDES; CARRIER MOBILITY; GALLIUM NITRIDES; HALL EFFECT; HETEROJUNCTIONS; INDIUM NITRIDES; INTERFACES; LAYERS; OSCILLATIONS; ROUGHNESS; SCATTERING; SHUBNIKOV-DE HAAS EFFECT; TWO-DIMENSIONAL SYSTEMS