skip to main content

Title: Long phase coherence length and anisotropic magnetoresistance in MgZnO thin film

We comprehensively investigate magnetotransport properties of MgZnO thin film grown on ZnO substrate by molecular-beam epitaxy. We measure the weak localization effect and extract the electron phase coherence length by fitting to a three-dimensional weak localization theory and by analyzing the different changing rate of the magnetoresistance, results of which are in good agreement with each other. The phase coherence length ranges from 38.4±1    nm at 50 K to 99.8±3.6 nm at 1.4  K, almost the same as that of ZnO nanoplates and In-doped ZnO nanowires, and its temperature dependence is found to scale as T{sup −3/4}. Meanwhile, we study the anisotropic magnetoresistance resulting from the geometric effect as well as the Lorentz force induced path-length effect, which will be enhanced in higher magnetic fields.
Authors:
; ; ; ; ;  [1] ; ;  [2] ;  [1] ;  [3] ;  [3]
  1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083 (China)
  2. Department of Physics, Xiamen University, Xiamen 361005 (China)
  3. (China)
Publication Date:
OSTI Identifier:
22402890
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANISOTROPY; COHERENCE LENGTH; DOPED MATERIALS; ELECTRONS; LORENTZ FORCE; MAGNESIUM COMPOUNDS; MAGNETIC FIELDS; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; NANOWIRES; SUBSTRATES; TEMPERATURE DEPENDENCE; THIN FILMS; THREE-DIMENSIONAL LATTICES; ZINC OXIDES