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Title: Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films

Here, we report on the current transport mechanisms in AlN thin films deposited at a low temperature (i.e., 200 °C) on p-type Si substrates by plasma-enhanced atomic layer deposition. Structural characterization of the deposited AlN was carried out using grazing-incidence X-ray diffraction, revealing polycrystalline films with a wurtzite (hexagonal) structure. Al/AlN/ p-Si metal-insulator-semiconductor (MIS) capacitor structures were fabricated and investigated under negative bias by performing current-voltage measurements. As a function of the applied electric field, different types of current transport mechanisms were observed; i.e., ohmic conduction (15.2–21.5 MV/m), Schottky emission (23.6–39.5 MV/m), Frenkel-Poole emission (63.8–211.8 MV/m), trap-assisted tunneling (226–280 MV/m), and Fowler-Nordheim tunneling (290–447 MV/m). Electrical properties of the insulating AlN layer and the fabricated Al/AlN/p-Si MIS capacitor structure such as dielectric constant, flat-band voltage, effective charge density, and threshold voltage were also determined from the capacitance-voltage measurements.
Authors:
 [1] ; ; ;  [2] ;  [3]
  1. Faculty of Science, Department of Physics, Cankiri Karatekin University, Cankiri 18100 (Turkey)
  2. National Nanotechnology Research Center (UNAM), Bilkent University, Bilkent, Ankara 06800 (Turkey)
  3. (Turkey)
Publication Date:
OSTI Identifier:
22402886
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM; ALUMINIUM NITRIDES; CAPACITANCE; CAPACITORS; DEPOSITION; EFFECTIVE CHARGE; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; HEXAGONAL LATTICES; LAYERS; PERMITTIVITY; PLASMA; POLYCRYSTALS; P-TYPE CONDUCTORS; SUBSTRATES; THIN FILMS; TUNNEL EFFECT; X-RAY DIFFRACTION