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Title: Charge transport-accumulation in multilayer structures with Si{sub 3}N{sub 4} and thick(5.5 nm) SiO{sub 2}

Double-injection, transport, and accumulation of charge in metal-thick oxide-nitride-silicon and silicon-tunnel oxide-nitride-thick oxide-silicon structures have been theoretically studied. Calculation results were compared to experimental results. The charge transport in Si{sub 3}N{sub 4} is quantitatively described assuming the multiphonon ionization theory of neutral traps with a capture cross-section less than 10{sup −14} cm{sup 2}. With traps amphoterism taken into account, the calculation predicts the existence of a layer with their excessive concentration near the SiO{sub 2}/Si{sub 3}N{sub 4} interface. The model satisfactorily describes the write/erase characteristics in silicon-oxide-nitride-oxide-silicon-structures from Bu and White (Solid-State Electron. 45, 113 (2001))
Authors:
 [1]
  1. Institute of Semiconductor Physics SB RAS, 630090 Novosibirsk (Russian Federation)
Publication Date:
OSTI Identifier:
22402870
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 15; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CAPTURE; CHARGE TRANSPORT; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; CROSS SECTIONS; ELECTRONS; INTERFACES; IONIZATION; LAYERS; MULTI-PHOTON PROCESSES; SILICON; SILICON NITRIDES; SILICON OXIDES; SOLIDS; TRAPS