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Title: Observation of weak carrier localization in green emitting InGaN/GaN multi-quantum well structure

Green emitting InGaN/GaN multi-quantum well samples were investigated using transmission electron microscopy, photoluminescence (PL), and time-resolved photoluminescence (TRPL) spectroscopy. Weak carrier localization with characteristic energy of ∼12 meV due to an inhomogeneous distribution of In in the InGaN quantum (QW) layer is observed. The temperature dependence of the PL peak energy exhibits S-shape phenomenon and is comparatively discussed within the framework of the Varshni's empirical formula. The full width at half maximum of the PL emission band shows an increasing-decreasing-increasing behavior with increasing temperature arising from the localized states caused by potential fluctuations. The radiative life time, τ{sub r}, extracted from the TRPL profile shows ∼T{sup 3/2} dependence on temperature above 200 K, which confirms the absence of the effect of carrier localization at room temperature.
Authors:
; ;  [1] ;  [2] ; ;  [3] ;  [4]
  1. Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan (China)
  2. Department of Mechanical and Electromechanical Engineering, National Sun Yat-sen University, Kaohsiung 80424, Taiwan (China)
  3. Department of Physics, Tamkang University, Tamsui Dist., New Taipei City 25137, Taiwan (China)
  4. Department of Physics, National Kaohsiung Normal University, Kaohsiung 80264, Taiwan (China)
Publication Date:
OSTI Identifier:
22402846
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 14; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; EMISSION SPECTROSCOPY; FLUCTUATIONS; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM NITRIDES; LAYERS; PHOTOLUMINESCENCE; POTENTIALS; QUANTUM WELLS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TIME RESOLUTION; TRANSMISSION ELECTRON MICROSCOPY