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Title: Formation kinetics of copper-related light-induced degradation in crystalline silicon

Light-induced degradation (LID) is a deleterious effect in crystalline silicon, which is considered to originate from recombination-active boron-oxygen complexes and/or copper-related defects. Although LID in both cases appears as a fast initial decay followed by a second slower degradation, we show that the time constant of copper-related degradation increases with increasing boron concentration in contrast to boron-oxygen LID. Temperature-dependent analysis reveals that the defect formation is limited by copper diffusion. Finally, interface defect density measurements confirm that copper-related LID is dominated by recombination in the wafer bulk.
Authors:
;  [1]
  1. Department of Micro and Nanosciences, Aalto University, Tietotie 3, 02150 Espoo (Finland)
Publication Date:
OSTI Identifier:
22402827
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABUNDANCE; BORON; COPPER; DEFECTS; DENSITY; INTERFACES; KINETICS; OXYGEN; OXYGEN COMPLEXES; RECOMBINATION; SILICON; TEMPERATURE DEPENDENCE; VISIBLE RADIATION