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Title: Double Gaussian distribution of barrier height observed in densely packed GaN nanorods over Si (111) heterostructures

GaN nanorods were grown by plasma assisted molecular beam epitaxy on intrinsic Si (111) substrates which were characterized by powder X-ray diffraction, field emission scanning electron microscopy, and photoluminescence. The current–voltage characteristics of the GaN nanorods on Si (111) heterojunction were obtained from 138 to 493 K which showed the inverted rectification behavior. The I-V characteristics were analyzed in terms of thermionic emission model. The temperature variation of the apparent barrier height and ideality factor along with the non-linearity of the activation energy plot indicated the presence of lateral inhomogeneities in the barrier height. The observed two temperature regimes in Richardson's plot could be well explained by assuming two separate Gaussian distribution of the barrier heights.
Authors:
; ; ;  [1] ;  [1] ;  [2]
  1. Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India)
  2. (India)
Publication Date:
OSTI Identifier:
22402825
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ACTIVATION ENERGY; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; FIELD EMISSION; GALLIUM NITRIDES; GAUSS FUNCTION; HEIGHT; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; THERMIONIC EMISSION; X-RAY DIFFRACTION