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Title: Effect of temperature on the current (capacitance and conductance)–voltage characteristics of Ti/n-GaAs diode

In this study, Ti/n-GaAs Schottky barrier diode has been fabricated by DC magnetron sputtering. The current–voltage, capacitance–voltage, and conductance–voltage characteristics of Ti/n–GaAs diode have been investigated in the temperature range of 80–320 K. The ideality factor and barrier height values have been calculated from the forward current–voltage characteristics. The variation of the diode parameters with the sample temperature has been attributed to the presence of the lateral inhomogeneities of the barrier height. The temperature dependent capacitance–voltage characteristics have been measured to calculate the carrier concentration, diffusion potential, barrier height, and temperature coefficient of the barrier height (α = −0.65 meV K{sup −1}). The fact that the temperature coefficient of the barrier height changes from metal to metal has been ascribed to the chemical nature of the contact metal or metal electronegativity.
Authors:
 [1] ; ;  [2] ;  [3] ;  [4]
  1. Department of Electricity and Energy, Vocational High School of Technical Sciences, Bingol University, 12000 Bingol (Turkey)
  2. Department of Physics, Faculty of Sciences, Ataturk University, 25240 Erzurum (Turkey)
  3. Department of Physics, Faculty of Sciences, Yildiz Technical University, 34220 Istanbul (Turkey)
  4. Department of Engineering Physics, Faculty of Sciences, Istanbul Medeniyet University, 34700 Istanbul (Turkey)
Publication Date:
OSTI Identifier:
22402823
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CAPACITANCE; ELECTRONEGATIVITY; GALLIUM ARSENIDES; MAGNETRONS; POTENTIALS; SCHOTTKY BARRIER DIODES; SPUTTERING; TEMPERATURE COEFFICIENT; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K