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Title: Effect of temperature on the current (capacitance and conductance)–voltage characteristics of Ti/n-GaAs diode

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4904918· OSTI ID:22402823
 [1];  [2];  [3];  [4]
  1. Department of Electricity and Energy, Vocational High School of Technical Sciences, Bingol University, 12000 Bingol (Turkey)
  2. Department of Physics, Faculty of Sciences, Ataturk University, 25240 Erzurum (Turkey)
  3. Department of Physics, Faculty of Sciences, Yildiz Technical University, 34220 Istanbul (Turkey)
  4. Department of Engineering Physics, Faculty of Sciences, Istanbul Medeniyet University, 34700 Istanbul (Turkey)

In this study, Ti/n-GaAs Schottky barrier diode has been fabricated by DC magnetron sputtering. The current–voltage, capacitance–voltage, and conductance–voltage characteristics of Ti/n–GaAs diode have been investigated in the temperature range of 80–320 K. The ideality factor and barrier height values have been calculated from the forward current–voltage characteristics. The variation of the diode parameters with the sample temperature has been attributed to the presence of the lateral inhomogeneities of the barrier height. The temperature dependent capacitance–voltage characteristics have been measured to calculate the carrier concentration, diffusion potential, barrier height, and temperature coefficient of the barrier height (α = −0.65 meV K{sup −1}). The fact that the temperature coefficient of the barrier height changes from metal to metal has been ascribed to the chemical nature of the contact metal or metal electronegativity.

OSTI ID:
22402823
Journal Information:
Journal of Applied Physics, Vol. 116, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English