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Title: Scattering in graphene associated with charged out-of-plane impurities

A charged impurity outside the plane of a graphene layer contributes to scattering of electrons (and holes) in the graphene. The interaction occurs through two distinct mechanisms associated with the charge: (1) the (screened) Coulomb potential, and (2) the electric field perpendicular to the graphene plane that causes a spatially varying Rashba spin-orbit interaction. Both types of scattering are examined, with the screened potential self-consistently calculated in nonlinear Thomas-Fermi approximation. Different selection rules for the two mechanisms lead to qualitative differences in the differential scattering cross-sections. Using accepted parameters for the Rashba interaction, the latter is found to make only a very small contribution to the scattering associated with a remote charge.
Authors:
; ;  [1] ; ;  [1] ;  [2]
  1. University of Minnesota, Minneapolis, Minnesota 55455 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22402817
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COULOMB FIELD; ELECTRONS; GRAPHENE; HOLES; IMPURITIES; L-S COUPLING; POTENTIALS; SCATTERING; SELECTION RULES; THOMAS-FERMI MODEL