Si etching with reactive neutral beams of very low energy

Journal Article · Sun Dec 14 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4903974· OSTI ID:22402758

Hara, Yasuhiro ^[1]; Hamagaki, Manabu; Mise, Takaya ^[2]; Iwata, Naotaka; Hara, Tamio ^[3]

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1. Organization for Research and Development of Innovative Science and Technology, Kansai University, 3-3-35 Yamate-chou, Suita, Osaka 565-0871 (Japan)
2. RIKEN, 2-1, Hirosawa, Wako, Saitama 351-0198 (Japan)
3. Toyota Technological Institute, 2-12-1 Hisakata, Tenpaku-ku, Nagoya 468-8511 (Japan)

A Si etching process has been investigated with reactive neutral beams (NBs) extracted using a low acceleration voltage of less than 100 V from CF{sub 4} and Ar mixed plasmas. The etched Si profile shows that the etching process is predominantly anisotropic. The reactive NB has a constant Si etching rate in the acceleration voltage range from 20 V to 80 V. It is considered that low-energy NBs can trigger Si etching because F radicals adsorb onto the Si surface and weaken Si–Si bonds. The etching rate per unit beam flux is 33 times higher than that with Ar NB. These results show that the low-energy reactive NB is useful for damage-free high speed Si etching.

• OSTI ID: 22402758
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ACCELERATION
ANISOTROPY
BEAMS
CARBON TETRAFLUORIDE
ELECTRIC POTENTIAL
ETCHING
PLASMA
RADICALS
SURFACES
VELOCITY