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Title: Effect of atomic layer deposition growth temperature on the interfacial characteristics of HfO{sub 2}/p-GaAs metal-oxide-semiconductor capacitors

The effect of atomic layer deposition (ALD) growth temperature on the interfacial characteristics of p-GaAs MOS capacitors with ALD HfO{sub 2} high-k dielectric using tetrakis(ethylmethyl)amino halfnium precursor is investigated in this study. Using the combination of capacitance-voltage (C-V) and X-ray photoelectron spectroscopy (XPS) measurements, ALD growth temperature is found to play a large role in controlling the reaction between interfacial oxides and precursor and ultimately determining the interface properties. The reduction of surface oxides is observed to be insignificant for ALD at 200 °C, while markedly pronounced for growth at 300 °C. The corresponding C-V characteristics are also shown to be ALD temperature dependent and match well with the XPS results. Thus, proper ALD process is crucial in optimizing the interface quality.
Authors:
; ; ;  [1]
  1. School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071 (China)
Publication Date:
OSTI Identifier:
22402752
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; GALLIUM ARSENIDES; HAFNIUM OXIDES; INTERFACES; METALS; PRECURSOR; SEMICONDUCTOR MATERIALS; SILICON OXIDES; SURFACES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; X-RAY PHOTOELECTRON SPECTROSCOPY