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Title: Dual-sensor technique for characterization of carrier lifetime decay transients in semiconductors

This work addresses the frequent discrepancy between transient photoconductive (PC) decay and transient photoluminescence (PL) decay. With this dual- sensor technique, one measures the transient PC and PL decay simultaneously with the same incident light pulse, removing injection-level uncertainty. Photoconductive decay measures the transient photoconductivity, Δσ(t). PCD senses carriers released from shallow traps as well as the photo-generated electron-hole pairs. In addition, variations in carrier mobility with injection level (and time) contribute to the decay time. PL decay senses only electron-hole recombination via photon emission. Theory and experiment will show that the time dependence of the two techniques can be quite different at high injection.
Authors:
 [1] ;  [2] ; ; ;  [1]
  1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22402744
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 21; Other Information: (c) 2014 U.S. Government; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIER LIFETIME; CARRIER MOBILITY; DECAY; HOLES; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; TIME DEPENDENCE; TRAPS