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Title: Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors

Band-to-band tunneling parameters of strained indirect bandgap materials are not well-known, hampering the reliability of performance predictions of tunneling devices based on these materials. The nonlocal band-to-band tunneling model for compressively strained SiGe is calibrated based on a comparison of strained SiGe p-i-n tunneling diode measurements and doping-profile-based diode simulations. Dopant and Ge profiles of the diodes are determined by secondary ion mass spectrometry and capacitance-voltage measurements. Theoretical parameters of the band-to-band tunneling model are calculated based on strain-dependent properties such as bandgap, phonon energy, deformation-potential-based electron-phonon coupling, and hole effective masses of strained SiGe. The latter is determined with a 6-band k·p model. The calibration indicates an underestimation of the theoretical electron-phonon coupling with nearly an order of magnitude. Prospects of compressively strained SiGe tunneling transistors are made by simulations with the calibrated model.
Authors:
;  [1] ;  [2] ; ; ; ; ; ; ; ; ; ; ; ; ; ;  [1]
  1. imec, Kapeldreef 75, 3001 Leuven (Belgium)
  2. (Belgium)
Publication Date:
OSTI Identifier:
22402741
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CALIBRATION; DEFORMATION; ELECTRIC POTENTIAL; ELECTRON-PHONON COUPLING; FIELD EFFECT TRANSISTORS; GERMANIUM SILICIDES; MASS SPECTROSCOPY; PHONONS; RELIABILITY; SIMULATION; STRAINS; TUNNEL DIODES; TUNNEL EFFECT