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Title: Electronic state of Er in sputtered AlN:Er films determined by magnetic measurements

Abstract

The optoelectronic and piezoelectric properties of AlN:Er thin films have been of great recent interest for potential device applications. In this work, the focus is on the electronic state of Er in AlN:Er thin films prepared by reactive magnetron sputtering on (001) p-type Si substrate. X-ray diffraction shows that Er doping expands the lattice and the AlN:Er film has preferential c-plane orientation. To determine whether Er in AlN:Er is present as Er metal, Er{sub 2}O{sub 3}, or Er{sup 3+} substituting for Al{sup 3+}, detailed measurements and analysis of the temperature dependence (2 K–300 K) of the magnetization M at a fixed magnetic field H along with the M vs. H data at 2 K up to H = 90 kOe are presented. The presence of Er{sub 2}O{sub 3} and Er metal is ruled out since their characteristic magnetic transitions are not observed in the AlN:Er sample. Instead, the observed M vs. T and M vs. H variations are consistent with Er present as Er{sup 3+} substituting for Al{sup 3+} in AlN:Er at a concentration x = 1.08% in agreement with x = 0.94% ± 0.20% determined using x-ray photoelectron spectroscopy (XPS). The larger size of Er{sup 3+} vs. Al{sup 3+}explains the observed lattice expansion of AlN:Er.

Authors:
;  [1]
  1. Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, West Virginia 26506 (United States)
Publication Date:
OSTI Identifier:
22402727
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 116; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM IONS; ALUMINIUM NITRIDES; CONCENTRATION RATIO; ECOLOGICAL CONCENTRATION; ERBIUM IONS; ERBIUM OXIDES; MAGNETIC FIELDS; MAGNETIZATION; MAGNETRONS; METALS; ORIENTATION; PIEZOELECTRICITY; SPUTTERING; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; THIN FILMS; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Narang, V., Seehra, M. S., E-mail: mseehra@wvu.edu, and Korakakis, D. Electronic state of Er in sputtered AlN:Er films determined by magnetic measurements. United States: N. p., 2014. Web. doi:10.1063/1.4903553.
Narang, V., Seehra, M. S., E-mail: mseehra@wvu.edu, & Korakakis, D. Electronic state of Er in sputtered AlN:Er films determined by magnetic measurements. United States. https://doi.org/10.1063/1.4903553
Narang, V., Seehra, M. S., E-mail: mseehra@wvu.edu, and Korakakis, D. 2014. "Electronic state of Er in sputtered AlN:Er films determined by magnetic measurements". United States. https://doi.org/10.1063/1.4903553.
@article{osti_22402727,
title = {Electronic state of Er in sputtered AlN:Er films determined by magnetic measurements},
author = {Narang, V. and Seehra, M. S., E-mail: mseehra@wvu.edu and Korakakis, D.},
abstractNote = {The optoelectronic and piezoelectric properties of AlN:Er thin films have been of great recent interest for potential device applications. In this work, the focus is on the electronic state of Er in AlN:Er thin films prepared by reactive magnetron sputtering on (001) p-type Si substrate. X-ray diffraction shows that Er doping expands the lattice and the AlN:Er film has preferential c-plane orientation. To determine whether Er in AlN:Er is present as Er metal, Er{sub 2}O{sub 3}, or Er{sup 3+} substituting for Al{sup 3+}, detailed measurements and analysis of the temperature dependence (2 K–300 K) of the magnetization M at a fixed magnetic field H along with the M vs. H data at 2 K up to H = 90 kOe are presented. The presence of Er{sub 2}O{sub 3} and Er metal is ruled out since their characteristic magnetic transitions are not observed in the AlN:Er sample. Instead, the observed M vs. T and M vs. H variations are consistent with Er present as Er{sup 3+} substituting for Al{sup 3+} in AlN:Er at a concentration x = 1.08% in agreement with x = 0.94% ± 0.20% determined using x-ray photoelectron spectroscopy (XPS). The larger size of Er{sup 3+} vs. Al{sup 3+}explains the observed lattice expansion of AlN:Er.},
doi = {10.1063/1.4903553},
url = {https://www.osti.gov/biblio/22402727}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 21,
volume = 116,
place = {United States},
year = {Sun Dec 07 00:00:00 EST 2014},
month = {Sun Dec 07 00:00:00 EST 2014}
}