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Title: Enhanced excitonic photoconductivity due to built-in internal electric field in TlGaSe{sub 2} layered semiconductor

The strong enhancement, by several orders of magnitude, of the excitonic peak within the photoconductivity spectrum of TlGaSe{sub 2} semiconductor was observed. The samples were polarized in external dc electric field, which was applied prior to the measurements. Due to the accumulation of charges near the surface, an internal electric field was formed. Electron-hole pairs that were created after the absorption of light are fallen in and then separated by the built-in electric field, which prevents radiative recombination process.
Authors:
;  [1] ;  [2] ;  [1] ;  [1] ;  [3]
  1. Department of Physics, Gebze Institute of Technology, Gebze, Kocaeli 41400 (Turkey)
  2. (Azerbaijan)
  3. (Turkey)
Publication Date:
OSTI Identifier:
22402717
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; ELECTRIC FIELDS; GALLIUM COMPOUNDS; PHOTOCONDUCTIVITY; SELENIDES; SEMICONDUCTOR MATERIALS; SPECTRA; SURFACES; THALLIUM COMPOUNDS