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Title: Tuning of the hole spin relaxation time in single self-assembled In{sub 1−x}Ga{sub x}As/GaAs quantum dots by electric field

We investigate the electric field tuning of the phonon-assisted hole spin relaxation in single self-assembled In{sub 1−x}Ga{sub x}As/GaAs quantum dots (QDs), using an atomistic empirical pseudopotential method. We find that the electric field along the growth direction can tune the hole spin relaxation time for more than one order of magnitude. The electric field can prolong or shorten the hole spin lifetime and the tuning shows an asymmetry in terms of the field direction. The asymmetry is more pronounced for the taller dot. The results show that the electric field is an effective way to tune the hole spin-relaxation in self-assembled QDs.
Authors:
; ;  [1] ;  [2]
  1. Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22402701
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION SPECTROSCOPY; ELECTRIC FIELDS; GALLIUM ARSENIDES; HOLES; POTENTIALS; QUANTUM DOTS; RELAXATION TIME; SPIN; X-RAY SPECTROSCOPY