skip to main content

SciTech ConnectSciTech Connect

Title: Effects of a nearby Mn delta layer on the optical properties of an InGaAs/GaAs quantum well

We investigated the effects of nearby Mn ions on the confined states of a InGaAs/GaAs quantum well through circularly polarized and magneto-optical measurements. The addition of a Mn delta-doping layer at the barrier close to the well gives rise to surprisingly narrow absorption peaks in the photoluminescence excitation spectra. The peaks become increasingly stronger for decreasing spacer-layer thicknesses between the quantum well and the Mn layer. Most of the peaks were identified based on self-consistent calculations; however, we observed additional peaks that cannot be identified with quantum well transitions, which origin we attribute to an enhanced exciton-phonon coupling. Finally, we discuss possible effects related to the exciton magneto-polaron complex in the reinforcement of the photoluminescence excitation peaks.
Authors:
; ; ; ;  [1] ; ; ; ;  [2]
  1. Instituto de Física “Gleb Wataghin,” Unicamp, 13083-859 Campinas, SP (Brazil)
  2. Physico-Technical Research Institute, Lobachevsky State University of Nizhni Novgorod, 603950 Nizhni Novgorod (Russian Federation)
Publication Date:
OSTI Identifier:
22402687
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION; EXCITATION; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; MANGANESE IONS; OPTICAL PROPERTIES; PEAKS; PHONONS; PHOTOLUMINESCENCE; QUANTUM WELLS