skip to main content

SciTech ConnectSciTech Connect

Title: Empirical determination of the energy band gap narrowing in p{sup +} silicon heavily doped with boron

In the analysis of highly doped silicon, energy band gap narrowing (BGN) and degeneracy effects may be accounted for separately, as a net BGN in conjunction with Fermi-Dirac statistics, or lumped together in an apparent BGN used with Boltzmann statistics. This paper presents an experimental study of silicon highly doped with boron, with the aim of evaluating the applicability of previously reported BGN models. Different boron diffusions covering a broad range of dopant densities were prepared, and their characteristic recombination current parameters J{sub 0} were measured using a contactless photoconductance technique. The BGN was subsequently extracted by matching theoretical simulations of carrier transport and recombination in each of the boron diffused regions and the measured J{sub 0} values. An evaluation of two different minority carrier mobility models indicates that their impact on the extraction of the BGN is relatively small. After considering possible uncertainties, it can be concluded that the BGN is slightly larger in p{sup +} silicon than in n{sup +} silicon, in qualitative agreement with theoretical predictions by Schenk. Nevertheless, in quantitative terms that theoretical model is found to slightly underestimate the BGN in p{sup +} silicon. With the two different parameterizations derived in this paper for themore » BGN in p{sup +} silicon, both statistical approaches, Boltzmann and Fermi-Dirac, provide a good agreement with the experimental data.« less
Authors:
;  [1]
  1. Research School of Engineering, The Australian National University, Canberra ACT 0200 (Australia)
Publication Date:
OSTI Identifier:
22402681
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BOLTZMANN STATISTICS; BORON; CARRIER MOBILITY; DENSITY; DIFFUSION; DOPED MATERIALS; FERMI STATISTICS; PHOTOCONDUCTIVITY; SILICON; SIMULATION