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Title: Incorporating photon recycling into the analytical drift-diffusion model of high efficiency solar cells

The analytical drift-diffusion formalism is able to accurately simulate a wide range of solar cell architectures and was recently extended to include those with back surface reflectors. However, as solar cells approach the limits of material quality, photon recycling effects become increasingly important in predicting the behavior of these cells. In particular, the minority carrier diffusion length is significantly affected by the photon recycling, with consequences for the solar cell performance. In this paper, we outline an approach to account for photon recycling in the analytical Hovel model and compare analytical model predictions to GaAs-based experimental devices operating close to the fundamental efficiency limit.
Authors:
 [1] ;  [2] ; ;  [3] ;  [4]
  1. The George Washington University, 2121 I Street NW, Washington, DC 20037 (United States)
  2. (United States)
  3. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
  4. Naval Research Laboratory, Washington, DC 20375 (United States)
Publication Date:
OSTI Identifier:
22402680
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COMPARATIVE EVALUATIONS; DIFFUSION; DIFFUSION LENGTH; EFFICIENCY; GALLIUM ARSENIDES; PERFORMANCE; PHOTONS; RECYCLING; SOLAR CELLS; SURFACES