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Title: Electronic structure and morphology of epitaxial Bi{sub 2}Te{sub 2}Se topological insulator films

Epitaxial films of the ternary topological insulator Bi{sub 2}Te{sub 2}Se were grown on Si(111) substrates and investigated for their surface electronic properties and morphology. We employ a Se-capping procedure allowing for the preparation of clean films in the surface-analysis experimental setups. Using angle-resolved photoelectron spectroscopy, we determine the dispersion of the topological surface state. With time after surface preparation, the spectroscopic features in the surface electronic structure exhibit significant temperature-dependent shifts to higher binding energies. Scanning tunneling microscopy images show terraces with typical step edge separations of 50 nm–150 nm. X-ray photoelectron spectroscopy indicates an increased Se concentration at the surface.
Authors:
; ; ; ; ; ;  [1] ; ; ; ;  [2] ;  [2] ;  [3]
  1. Experimentelle Physik VII, Universität Würzburg, Am Hubland, 97074 Würzburg (Germany)
  2. Experimentelle Physik III, Universität Würzburg, Am Hubland, 97074 Würzburg (Germany)
  3. (Poland)
Publication Date:
OSTI Identifier:
22402667
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BINDING ENERGY; CONCENTRATION RATIO; DISPERSIONS; ELECTRONIC STRUCTURE; EPITAXY; FILMS; IMAGES; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SUBSTRATES; SURFACES; TEMPERATURE DEPENDENCE; TOPOLOGY; X-RAY PHOTOELECTRON SPECTROSCOPY