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Title: New non-linear photovoltaic effect in uniform bipolar semiconductor

A linear theory of the new non-linear photovoltaic effect in the closed circuit consisting of a non-uniformly illuminated uniform bipolar semiconductor with neutral impurities is developed. The non-uniform photo-excitation of impurities results in the position-dependant current carrier mobility that breaks the semiconductor homogeneity and induces the photo-electromotive force (emf). As both the electron (or hole) mobility gradient and the current carrier generation rate depend on the light intensity, the photo-emf and the short-circuit current prove to be non-linear functions of the incident light intensity at an arbitrarily low illumination. The influence of the sample size on the photovoltaic effect magnitude is studied. Physical relations and distinctions between the considered effect and the Dember and bulk photovoltaic effects are also discussed.
Authors:
 [1]
  1. A. Usikov Institute for Radiophysics and Electronics, National Academy of Sciences of Ukraine, 12 Ac. Proscura St., Kharkov 61085 (Ukraine)
Publication Date:
OSTI Identifier:
22402662
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIER MOBILITY; CARRIERS; CURRENTS; ELECTRICAL FAULTS; ELECTROMOTIVE FORCE; HOLE MOBILITY; ILLUMINANCE; IMPURITIES; NONLINEAR PROBLEMS; PHOTOVOLTAIC EFFECT; SEMICONDUCTOR MATERIALS