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Title: Experimental and theoretical identification of a high-pressure polymorph of Ga{sub 2}S{sub 3} with α-Bi{sub 2}Te{sub 3}-type structure

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4902070· OSTI ID:22402656
; ; ;  [1]; ;  [2];  [3]
  1. Key Laboratory of Orogenic Belts and Crustal Evolution, MOE, Peking University and School of Earth and Space Sciences, Peking University, Beijing 100871 (China)
  2. Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Science, Beijing 10049 (China)
  3. Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204 (China)

Since the discovery of α-phase Bi{sub 2}Te{sub 3}, Sb{sub 2}Te{sub 3}, and Bi{sub 2}Se{sub 3} as 3D topological insulators, many experimental and theoretical studies of A{sub 2}B{sub 3}-type chalcogenides have been performed to search for new materials with interesting elastic and electric properties at ambient and extreme conditions. In this study, high-pressure properties of Ga{sub 2}S{sub 3} have been characterized by in situ synchrotron X-ray diffraction (XRD), X-ray absorption near edge structure measurements, and Density-functional theory (DFT) calculations. At ∼16.0 GPa, a phase transition of α′-Ga{sub 2}S{sub 3} (Cc and Z = 4) is observed experimentally to a new polymorph, which is indentified to be the tetradymite-type or α-Bi{sub 2}Te{sub 3}-type crystal structure (R3{sup ¯}m and Z = 3) by laser-annealing XRD experiments and DFT calculations. The isothermal pressure-volume relationship of Ga{sub 2}S{sub 3} is well described by the second-order Birch-Murnaghan equation of state with K{sub 0} = 59(2) GPa and K{sub 0}{sup ′} = 4 (fixed) for the α′-Ga{sub 2}S{sub 3}, and K{sub 0} = 91(3) GPa, and K{sub 0}{sup ′} = 4 (fixed) for the tetradymite-type phase. In addition, band gap of α′-Ga{sub 2}S{sub 3} decreases on compression and the tetradymite-type Ga{sub 2}S{sub 3} exhibits metallization based on DFT calculations. The pressure-induced phase transition accompanying by changes of elastic and electrical properties may give some implications to other chalcogenides under high pressure.

OSTI ID:
22402656
Journal Information:
Journal of Applied Physics, Vol. 116, Issue 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English