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Title: Enhanced diffusion of oxygen depending on Fermi level position in heavily boron-doped silicon

The enhanced diffusivity of oxygen in heavily boron doped silicon was obtained by analyzing oxygen out-diffusion profile changes found at the interface between a lightly boron-doped silicon epitaxial layer and a heavily boron-doped silicon substrate by secondary ion mass spectrometry. It was found that the diffusivity is proportional to the square root of boron concentration in the range of 10{sup 18 }cm{sup −3}–10{sup 19 }cm{sup −3} at temperatures from 750 °C to 950 °C. The model based on the diffusion of oxygen dimers in double positive charge state could explain the enhanced diffusion. We have concluded that oxygen diffusion enhanced in heavily boron-doped silicon is attributed to oxygen dimers ionized depending on Fermi level position.
Authors:
; ;  [1] ;  [2]
  1. Technology Division, Advanced Evaluation and Technology Development Department, SUMCO Corporation, 1-52 Kubara, Yamashiro-cho, Imari, Saga 849-4256 (Japan)
  2. Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197 (Japan)
Publication Date:
OSTI Identifier:
22402652
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABUNDANCE; BORON; CHARGE STATES; DIFFUSION; DIMERS; DOPED MATERIALS; EPITAXY; FERMI LEVEL; INTERFACES; LAYERS; MASS SPECTROSCOPY; OXYGEN; SILICON; SUBSTRATES; TEMPERATURE RANGE 1000-4000 K