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Title: O-band quantum-confined Stark effect optical modulator from Ge/Si{sub 0.15}Ge{sub 0.85} quantum wells by well thickness tuning

We report an O-band optical modulator from a Ge/Si{sub 0.15}Ge{sub 0.85} multiple quantum well (MQW). Strong O-band optical modulation in devices commonly operating within E-band wavelength range can be achieved by simply decreasing the quantum well thickness. Both spectral photocurrent and optical transmission studies are performed to evaluate material characteristics and device performance from a surface-illuminated diode and a waveguide modulator, respectively. These results demonstrate the potential of using Ge/Si{sub 0.15}Ge{sub 0.85} MQWs for the realization of future on-chip wavelength-division multiplexing systems with optical modulators operating at different wavelengths over a wide spectral range.
Authors:
; ; ;  [1] ; ; ;  [2]
  1. Institut d'Electronique Fondamentale, Univ. Paris-Sud, CNRS UMR 8622, Bât. 220, 91405 Orsay Cedex (France)
  2. L-NESS, Dipartimento di Fisica del Politecnico di Milano, Polo di Como, Via Anzani 42, I-22100 Como (Italy)
Publication Date:
OSTI Identifier:
22402647
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; EQUIPMENT; MODULATION; PERFORMANCE; POTENTIALS; QUANTUM WELLS; STARK EFFECT; SURFACES; THICKNESS; TRANSMISSION; WAVEGUIDES; WAVELENGTHS