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Title: Erratum: “Influence of boron doping and hydrogen passivation on recombination of photoexcited charge carriers in silicon nanocrystal/SiC multilayers” [J. Appl. Phys. 114, 073101 (2013)]

No abstract prepared.
Authors:
; ; ; ;  [1] ; ; ;  [2] ; ;  [3]
  1. Department of Chemical Physics and Optics, Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, 121 16 Prague (Czech Republic)
  2. Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg (Germany)
  3. Institute for Microelectronics and Microsystems, Consiglio Nazionale delle Ricerche, via Piero Gobetti 101, I-40129 Bologna (Italy)
Publication Date:
OSTI Identifier:
22402645
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BORON; CHARGE CARRIERS; HYDROGEN; NANOSTRUCTURES; PASSIVATION; RECOMBINATION; SILICON; SILICON CARBIDES