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Title: Two-dimensional numerical simulation of boron diffusion for pyramidally textured silicon

Multidimensional numerical simulation of boron diffusion is of great relevance for the improvement of industrial n-type crystalline silicon wafer solar cells. However, surface passivation of boron diffused area is typically studied in one dimension on planar lifetime samples. This approach neglects the effects of the solar cell pyramidal texture on the boron doping process and resulting doping profile. In this work, we present a theoretical study using a two-dimensional surface morphology for pyramidally textured samples. The boron diffusivity and segregation coefficient between oxide and silicon in simulation are determined by reproducing measured one-dimensional boron depth profiles prepared using different boron diffusion recipes on planar samples. The established parameters are subsequently used to simulate the boron diffusion process on textured samples. The simulated junction depth is found to agree quantitatively well with electron beam induced current measurements. Finally, chemical passivation on planar and textured samples is compared in device simulation. Particularly, a two-dimensional approach is adopted for textured samples to evaluate chemical passivation. The intrinsic emitter saturation current density, which is only related to Auger and radiative recombination, is also simulated for both planar and textured samples. The differences between planar and textured samples are discussed.
Authors:
;  [1] ;  [2] ; ; ; ;  [1] ;  [3] ;  [4]
  1. Solar Energy Research Institute of Singapore (SERIS), National University of Singapore, 7 Engineering Drive 1, 117574 (Singapore)
  2. (Singapore)
  3. Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117576 (Singapore)
  4. (SERIS), National University of Singapore, 7 Engineering Drive 1, 117574 (Singapore)
Publication Date:
OSTI Identifier:
22402631
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BORON; COMPUTERIZED SIMULATION; DEPTH; OXIDES; PASSIVATION; SCANNING ELECTRON MICROSCOPY; SEGREGATION; SILICON; SOLAR CELLS; TEXTURE