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Title: Extraction of net interfacial polarization charge from Al{sub 0.54}In{sub 0.12}Ga{sub 0.34}N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition

Al{sub x}In{sub y}Ga{sub (1-x-y)}N materials show promise for use in GaN-based heterojunction devices. The growth of these materials has developed to the point where they are beginning to see implementation in high electron mobility transistors (HEMTs) and light emitting diodes. However, the electrical properties of these materials are still poorly understood, especially as related to the net polarization charge at the AlInGaN/GaN interface (Q{sub π}(net)). All theoretical calculations of Q{sub π}(net) share the same weakness: dependence upon polarization bowing parameters, which describe the deviation in Q{sub π}(net) from Vegard's law. In this study, direct analysis of Q{sub π}(net) for Al{sub 0.54}In{sub 0.12}Ga{sub 0.34}N/GaN HEMTs is reported as extracted from C-V, I-V, and Hall measurements performed on samples grown by metalorganic chemical vapor deposition. An average value for Q{sub π}(net) is calculated to be 2.015 × 10{sup −6} C/cm{sup 2}, with just 6.5% variation between measurement techniques.
Authors:
; ; ; ; ;  [1] ;  [1] ;  [2]
  1. Department of Electrical and Computer Engineering, University of California, Santa Barbara,California 93106 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22402625
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHEMICAL VAPOR DEPOSITION; ELECTRICAL PROPERTIES; ELECTRON MOBILITY; EXTRACTION; GALLIUM NITRIDES; HETEROJUNCTIONS; LIGHT EMITTING DIODES; MATERIALS; POLARIZATION; TRANSISTORS