skip to main content

SciTech ConnectSciTech Connect

Title: Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes

The roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well (MQW) light-emitting diodes are investigated by numerical simulation. The simulation results show that V-shaped pits cannot only screen dislocations, but also play an important role on promoting hole injection into the MQWs. It is revealed that the injection of holes into the MQW via the sidewalls of the V-shaped pits is easier than via the flat region, due to the lower polarization charge densities in the sidewall structure with lower In concentration and (10–11)-oriented semi-polar facets.
Authors:
; ; ; ;  [1]
  1. National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047 (China)
Publication Date:
OSTI Identifier:
22402612
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHARGE DENSITY; COMPUTERIZED SIMULATION; DISLOCATIONS; GALLIUM NITRIDES; HOLES; LIGHT EMITTING DIODES; POLARIZATION; QUANTUM EFFICIENCY; QUANTUM WELLS; SPECTROSCOPY