Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes

Journal Article · Fri Nov 14 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4901828· OSTI ID:22402612

Quan, Zhijue; Wang, Li; Zheng, Changda; Liu, Junlin; Jiang, Fengyi ^[1]

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1. National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047 (China)

The roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well (MQW) light-emitting diodes are investigated by numerical simulation. The simulation results show that V-shaped pits cannot only screen dislocations, but also play an important role on promoting hole injection into the MQWs. It is revealed that the injection of holes into the MQW via the sidewalls of the V-shaped pits is easier than via the flat region, due to the lower polarization charge densities in the sidewall structure with lower In concentration and (10–11)-oriented semi-polar facets.

• OSTI ID: 22402612
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHARGE DENSITY
COMPUTERIZED SIMULATION
DISLOCATIONS
GALLIUM NITRIDES
HOLES
LIGHT EMITTING DIODES
POLARIZATION
QUANTUM EFFICIENCY
QUANTUM WELLS
SPECTROSCOPY