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Title: Enhanced thermal radiation in terahertz and far-infrared regime by hot phonon excitation in a field effect transistor

We demonstrate the hot phonon effect on thermal radiation in the terahertz and far-infrared regime. A pseudomorphic high electron mobility transistor is used for efficiently exciting hot phonons. Boosting the hot phonon population can enhance the efficiency of thermal radiation. The transistor can yield at least a radiation power of 13 μW and a power conversion efficiency higher than a resistor by more than 20%.
Authors:
;  [1]
  1. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu, Taiwan (China)
Publication Date:
OSTI Identifier:
22402607
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CONVERSION; EFFICIENCY; ELECTRON MOBILITY; EXCITATION; FIELD EFFECT TRANSISTORS; PHONONS; RESISTORS; THERMAL RADIATION; YIELDS