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Title: Erratum: “Electronic structure and thermoelectric properties of p-type Ag-doped Mg{sub 2}Sn and Mg{sub 2}Sn{sub 1−x}Si{sub x} (x = 0.05, 0.1)” [J. Appl. Phys. 116, 153706 (2014)]

No abstract prepared.
Authors:
;  [1] ;  [1] ;  [2] ;  [3] ;  [1] ;  [4]
  1. Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
  2. (Poland)
  3. AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, Al. Mickiewicza 30, 30-059 Krakow (Poland)
  4. (United States)
Publication Date:
OSTI Identifier:
22402606
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DOPED MATERIALS; ELECTRONIC STRUCTURE; THERMOELECTRIC PROPERTIES