Low energy electron microscopy and Auger electron spectroscopy studies of Cs-O activation layer on p-type GaAs photocathode
Journal Article
·
· Journal of Applied Physics
- Institute for Advanced Research, Nagoya University, Nagoya 4648603 (Japan)
- NCEM, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
- Nagoya University Synchrotron Radiation Research Center, Nagoya 4648603 (Japan)
Work function, photoemission yield, and Auger electron spectra were measured on (001) p-type GaAs during negative electron affinity (NEA) surface preparation, surface degradation, and heating processes. The emission current sensitively depends on work function change and its dependence allows us to determine that the shape of the vacuum barrier was close to double triangular. Regarding the NEA surface degradation during photoemission, we discuss the importance of residual gas components the oxygen and hydrogen. We also found that gentle annealing (≤100 °C) of aged photocathodes results in a lower work function and may offer a patch to reverse the performance degradation.
- OSTI ID:
- 22402604
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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