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Title: Random telegraph signal and spin characteristics of the gate-all-around poly-silicon nanowire

An arsenic (As)-doped poly-silicon nanowire gate-all-around transistor fabricated using standard semiconductor methods was used to measure the Coulomb blockade effect by applying a tunable gate voltage. Two-level trapping states due to the random telegraph signal of fluctuating drain current were observed in the silicon transport channel. Under high magnetic fields, the superposition points of differential conductance revealed weak 2-electron singlet-triplet splitting states of the arsenic magnetic impurity. The weak spin-orbital coupling suggests that the electron-spin-polarization in the As-doped silicon nanowire and the two-level trapping state coexisted in the Coulomb blockade oscillations. These characteristics indicate that a few arsenic donors strongly affect the quantum behavior of the poly-silicon material.
Authors:
; ;  [1]
  1. Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan (China)
Publication Date:
OSTI Identifier:
22402603
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ARSENIC; COUPLING; CURRENTS; DOPED MATERIALS; ELECTRIC POTENTIAL; ELECTRONS; IMPURITIES; MAGNETIC FIELDS; RANDOMNESS; SEMICONDUCTOR MATERIALS; SIGNALS; SILICON; SPIN; SPIN ORIENTATION; TRANSISTORS; TRAPPING