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Title: Radiation and bias switch-induced charge dynamics in Al{sub 2}O{sub 3}-based metal-oxide-semiconductor structures

Charge trapping dynamics induced by exposition to γ-ray ({sup 60}Co) radiation and bias switching in MOS capacitors with atomic layer deposited Al{sub 2}O{sub 3} as insulating layer was studied. Electrical characterization prior to irradiation showed voltage instabilities due to electron tunneling between the substrate and preexisting defects inside the dielectric layer. Real-time capacitance-voltage (C-V) measurements during irradiation showed two distinct regimes: For short times, the response is strongly bias dependent and linear with log(t), consistent with electron trapping/detrapping; for long times, the voltage shift is dominated by the radiation-induced hole capture being always negative and linear with dose. A simple model that takes into account these two phenomena can successfully reproduce the observed results.
Authors:
; ; ; ; ;  [1] ; ;  [1] ;  [2] ;  [3]
  1. Laboratorio de Física de Dispositivos—Microelectrónica, Instituto de Ciencias de la Ingeniería (INTECIN), Facultad de Ingeniería, Universidad de Buenos Aires, Av. Paseo Colón 850, C1063ACV, Buenos Aires (Argentina)
  2. (CONICET), Buenos Aires (Argentina)
  3. Instituto de Microelectrónica de Barcelona (IMB)—Centro Nacional de Microelectrónica (CNM)—Consejo Superior de Investigaciones Científicas -CSIC, Barcelona (Spain)
Publication Date:
OSTI Identifier:
22402601
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; CAPACITANCE; CAPACITORS; CAPTURE; COBALT 60; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRONS; IRRADIATION; LAYERS; METALS; SEMICONDUCTOR MATERIALS; SILICON OXIDES; TRAPPING; TUNNEL EFFECT