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Title: Electronic properties of Si hollow nanowires

The electronic and structural properties of amorphous and crystalline silicon hollow nanowires (HNWs) have been investigated by X-ray photoemission (XPS), Raman, and photoluminescence spectroscopies. The HNWs have an internal diameter of about 80 nm and sidewalls with a thickness of 8–15 nm. Crystalline HNWs are obtained by thermal annealing of the amorphous ones. XPS shows that although oxidation is a very important process in these suspended nanostructures, a clear Si 2p signal is detected in the crystalline HNWS, thus indicating that the sidewall surface maintains mainly a pure silicon nature. Raman shows that the thermal annealing gives rise to a very good crystal quality and a weak visible luminescence signal is detected in the crystalline HNWs.
Authors:
;  [1] ; ;  [2] ;  [3]
  1. IMM-CNR, via del fosso del cavaliere 100, 00133 Roma (Italy)
  2. ISM-CNR, via del fosso del cavaliere 100, 00133 Roma (Italy)
  3. LNF-INFN, Via E. Fermi 40, 00044 Frascati (Italy)
Publication Date:
OSTI Identifier:
22402600
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; CRYSTALS; PHOTOEMISSION; PHOTOLUMINESCENCE; QUANTUM WIRES; SILICON; SURFACES; X RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY