Combined effects of Bi deficiency and Mn substitution on the structural transformation and functionality of BiFeO{sub 3} films

Journal Article · Fri Nov 07 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4901323· OSTI ID:22402595

Chen, Jingyi; Wang, Yao; Deng, Yuan ^[1]

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1. School of Materials Science and Engineering, Beijing Key Laboratory for Advance Functional Materials and Thin Film Technology, Beihang University, Beijing 100191 (China)

Mn-doped BiFeO{sub 3} films with Mn contents of 5 and 10 mol. % were prepared via a chemical route. A carefully controlled amount of Bi deficiency was introduced to further tune the lattice structure and the functionality of multiferroic BiFeO{sub 3}. The crystal structure of Bi{sub 1−δ}Fe{sub 1−x}Mn{sub x}O{sub 3} films was investigated by X-ray diffraction and Raman spectra; a rhombohedral-to-orthorhombic phase transition was revealed. The observed double hysteresis loops and two capacitance maxima from polarization vs electric field and capacitance-voltage measurements indicate an antiferroelectric-like behavior. Additionally, the coexistence of ferroelectric (FE) and antiferroelectric (AFE) phases in Bi{sub 1−δ}Fe{sub 1−x}Mn{sub x}O{sub 3} films was revealed from the domain structures obtained by piezoelectric force microscopy. The effects of Mn substitution in conjunction with Bi deficiency on the FE-AFE phase transition and electrical behavior of BiFeO{sub 3} films are discussed in detail. Meanwhile, magnetic and photoluminescence measurements on the films illustrate that Mn substitution gives rise to the net magnetic moment and the defects induced by both Bi deficiency and Mn substitution influence the electronic structure of BiFeO{sub 3} films. This study thus shows a simple and effective way to control the functionalities of BiFeO{sub 3} films.

• OSTI ID: 22402595
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CAPACITANCE
DOMAIN STRUCTURE
DOPED MATERIALS
ELECTRIC FIELDS
ELECTRIC POTENTIAL
ELECTRONIC STRUCTURE
FERROELECTRIC MATERIALS
FILMS
HYSTERESIS
MAGNETIC MOMENTS
MICROSCOPY
ORTHORHOMBIC LATTICES
PHASE TRANSFORMATIONS
PHOTOLUMINESCENCE
PIEZOELECTRICITY
POLARIZATION
RAMAN SPECTRA
TRIGONAL LATTICES
X-RAY DIFFRACTION