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Title: Effect of Mn substitution on the transport properties of co-sputtered Fe{sub 3−x}Mn{sub x}Si epilayers

Motivated by the theoretical calculations that Fe{sub 3−x}Mn{sub x}Si can simultaneously exhibit a high spin polarization with a high Curie temperature to be applied in spintronic devices, and in order to further study the effect of Mn contents on the physical properties of Fe{sub 3−x}Mn{sub x}Si, we have investigated the effect of Mn substitution on the transport properties of epitaxial Fe{sub 3−x}Mn{sub x}Si (0≤x≤1) films systematically. The Fe{sub 3−x}Mn{sub x}Si films were epitaxially grown on MgO(001) plane with 45° rotation. The magnetization for various x shows enhanced irreversibility, implying the antiferromagnetic ordering induced by the substitution of Mn. A metal-semiconductor crossover was observed due to the enhanced disorders of interactions and the local lowering of symmetry induced by the substitution of Mn. The single-domain state in the Fe{sub 3−x}Mn{sub x}Si films leads to twofold symmetric curves of the anisotropic magnetoresistance and planar Hall resistivity.
Authors:
; ;  [1]
  1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072 (China)
Publication Date:
OSTI Identifier:
22402593
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANISOTROPY; ANTIFERROMAGNETISM; CURIE POINT; DIAGRAMS; EPITAXY; FILMS; MAGNESIUM OXIDES; MAGNETIZATION; MAGNETORESISTANCE; SEMICONDUCTOR MATERIALS; SPIN ORIENTATION; SPUTTERING; SYMMETRY