skip to main content

Title: Correlation between the electron-phonon coupling and rectifying performance for poly(3-hexylthiophene)/n-type Si devices

A correlation between the electron-phonon coupling and rectifying performance is identified for poly(3-hexylthiophene) (P3HT)/n-type Si devices and an analysis using the temperature-dependent Hall-effect characteristics is presented. The carrier mobility in the P3HT film exhibits strong temperature dependence, indicating the dominance of tunneling. However, the incorporation of titanium oxide (TiO{sub 2}) nanoparticles into P3HT leads to the dominance of hopping. The results demonstrate that the incorporation of TiO{sub 2} nanoparticles into P3HT influences the electrical property of P3HT/n-type Si devices by the electron-phonon coupling modification and the increased spacing between molecules that serve to enhance the carrier mobility in P3HT.
Authors:
;  [1]
  1. Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan (China)
Publication Date:
OSTI Identifier:
22402590
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIER MOBILITY; CORRELATIONS; ELECTRICAL PROPERTIES; ELECTRON-PHONON COUPLING; FILMS; HALL EFFECT; NANOPARTICLES; TEMPERATURE DEPENDENCE; TITANIUM OXIDES; TUNNEL EFFECT