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Title: Erratum: “Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si” [Appl. Phys. Lett. 105, 172105 (2014)]

No abstract prepared.
Authors:
; ; ; ; ; ; ;  [1]
  1. Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)
Publication Date:
OSTI Identifier:
22402510
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; DEPOSITS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; GALLIUM NITRIDES; SILICON; TRANSISTORS; ULTRAVIOLET SPECTRA; ULTRAVIOLET SPECTROMETERS