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Title: Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morphology and continuity of the synthesized films. A scanning electron microscopy study of films obtained using shorter depositions offers insight into the nucleation and growth behavior of h-BN on the Ni substrate. The morphology of h-BN was found to evolve from dendritic, star-shaped islands to larger, smooth triangular ones with increasing growth temperature.
Authors:
; ; ; ; ; ; ;  [1]
  1. Paul-Drude-Institut f√ľr Festk√∂rperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
Publication Date:
OSTI Identifier:
22402504
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; BORON NITRIDES; DENDRITES; DIELECTRIC MATERIALS; FILMS; FOILS; HEXAGONAL SYSTEMS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NICKEL; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES