Contact resistance improvement by the modulation of peripheral length to area ratio of graphene contact pattern

Journal Article · Mon May 25 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4921797· OSTI ID:22402503

Cho, Chunhum; Lee, Sangchul ^[1]; Lee, Sang Kyung; Noh, Jin Woo; Park, Woojin; Lee, Young Gon; Hwang, Hyeon Jun; Ham, Moon-Ho ^[2]; Kang, Chang Goo ^[3]

---

1. Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, 123 Chemdan-gwagiro, Buk-gu, Gwangju 500-712 (Korea, Republic of)
2. School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Chemdan-gwagiro, Buk-gu, Gwangju 500-712 (Korea, Republic of)
3. Korea Atomic Energy Research Institute, Advanced Radiation Technology Institute, 29, Geumgu-Gil, Jeongeup-Si, Jeollabuk-Do 580-185 (Korea, Republic of)

High contact resistance between graphene and metal is a major huddle for high performance electronic device applications of graphene. In this work, a method to improve the contact resistance of graphene is investigated by varying the ratio of peripheral length and area of graphene pattern under a metal contact. The contact resistance decreased to 0.8 kΩ·μm from 2.1 kΩ·μm as the peripheral length increased from 312 to 792 μm. This improvement is attributed to the low resistivity of edge-contacted graphene, which is 8.1 × 10{sup 5} times lower than that of top-contacted graphene.

• OSTI ID: 22402503
• Journal Information: Applied Physics Letters, Vol. 106, Issue 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ELECTRICAL PROPERTIES
ELECTRONIC EQUIPMENT
GRAPHENE
MECHANICAL PROPERTIES
METALS
PERFORMANCE