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Title: Contact resistance improvement by the modulation of peripheral length to area ratio of graphene contact pattern

High contact resistance between graphene and metal is a major huddle for high performance electronic device applications of graphene. In this work, a method to improve the contact resistance of graphene is investigated by varying the ratio of peripheral length and area of graphene pattern under a metal contact. The contact resistance decreased to 0.8 kΩ·μm from 2.1 kΩ·μm as the peripheral length increased from 312 to 792 μm. This improvement is attributed to the low resistivity of edge-contacted graphene, which is 8.1 × 10{sup 5} times lower than that of top-contacted graphene.
Authors:
;  [1] ; ; ; ; ; ;  [2] ;  [3] ;  [1] ;  [4]
  1. Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, 123 Chemdan-gwagiro, Buk-gu, Gwangju 500-712 (Korea, Republic of)
  2. School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 123 Chemdan-gwagiro, Buk-gu, Gwangju 500-712 (Korea, Republic of)
  3. Korea Atomic Energy Research Institute, Advanced Radiation Technology Institute, 29, Geumgu-Gil, Jeongeup-Si, Jeollabuk-Do 580-185 (Korea, Republic of)
  4. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22402503
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRICAL PROPERTIES; ELECTRONIC EQUIPMENT; GRAPHENE; MECHANICAL PROPERTIES; METALS; PERFORMANCE