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Title: Optical and electrical properties of Mg-doped AlN nanowires grown by molecular beam epitaxy

In this paper, the optical and electrical properties of Mg-doped AlN nanowires are discussed. At room temperature, with the increase of Mg-doping concentration, the Mg-acceptor energy level related optical transition can be clearly measured, which is separated about 0.6 eV from the band-edge transition, consistent with the Mg activation energy in AlN. The electrical conduction measurements indicate an activation energy of 23 meV at 300 K–450 K temperature range, which is significantly smaller than the Mg-ionization energy in AlN, suggesting the p-type conduction being mostly related to hopping conduction. The free hole concentration of AlN:Mg nanowires is estimated to be on the order of 10{sup 16 }cm{sup −3}, or higher.
Authors:
; ; ; ;  [1] ; ; ;  [2]
  1. Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9 (Canada)
  2. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)
Publication Date:
OSTI Identifier:
22402501
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; ALUMINIUM NITRIDES; CONCENTRATION RATIO; DOPED MATERIALS; ELECTRICAL PROPERTIES; ENERGY LEVELS; HOLES; MAGNESIUM; MOLECULAR BEAM EPITAXY; NANOWIRES; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K