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Title: Three dimensional imaging and analysis of a single nano-device at the ultimate scale using correlative microscopy techniques

The analysis of a same sample using nanometre or atomic-scale techniques is fundamental to fully understand device properties. This is especially true for the dopant distribution within last generation nano-transistors such as MOSFET or FINFETs. In this work, the spatial distribution of boron in a nano-transistor at the atomic scale has been investigated using a correlative approach combining electron and atom probe tomography. The distortions present in the reconstructed volume using atom probe tomography have been discussed by simulations of surface atoms using a cylindrical symmetry taking into account the evaporation fields. Electron tomography combined with correction of atomic density was used so that to correct image distortions observed in atom probe tomography reconstructions. These corrected atom probe tomography reconstructions then enable a detailed boron doping analysis of the device.
Authors:
; ; ; ;  [1] ;  [2] ; ; ; ;  [3] ; ;  [4]
  1. Univ. Grenoble Alpes, F-38000 Grenoble (France)
  2. (France)
  3. GPM UMR 6634 CNRS, Avenue de l'Université, 76801 Saint Etienne du Rouvray (France)
  4. STMicroelectronics, 850 Rue Jean Monnet, 38920 Crolles (France)
Publication Date:
OSTI Identifier:
22402499
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATOMS; BORON; CYLINDRICAL CONFIGURATION; DOPED MATERIALS; ELECTRONS; MICROSCOPY; MOSFET; NANOSTRUCTURES; SIMULATION; SPATIAL DISTRIBUTION; SURFACES; SYMMETRY; THREE-DIMENSIONAL CALCULATIONS; TOMOGRAPHY