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Title: Tunable biaxial in-plane compressive strain in a Si nanomembrane transferred on a polyimide film

A method of creating tunable and programmable biaxial compressive strain in silicon nanomembranes (Si NMs) transferred onto a Kapton{sup ®} HN polyimide film has been demonstrated. The programmable biaxial compressive strain (up to 0.54%) was generated utilizing a unique thermal property exhibited by the Kapton HN film, namely, it shrinks from its original size when exposed to elevated temperatures. The correlation between the strain and the annealing temperature was carefully investigated using Raman spectroscopy and high resolution X-ray diffraction. It was found that various amounts of compressive strains can be obtained by controlling the thermal annealing temperatures. In addition, a numerical model was used to evaluate the strain distribution in the Si NM. This technique provides a viable approach to forming in-plane compressive strain in NMs and offers a practical platform for further studies in strain engineering.
Authors:
; ; ; ;  [1] ;  [2] ;  [3]
  1. Department of Electrical and Computer Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706 (United States)
  2. Department of Electrical Engineering, University of Texas at Arlington, Arlington, Texas 76019 (United States)
  3. Department of Biomedical Engineering and Wisconsin Institute for Discovery, University of Wisconsin–Madison, Madison, Wisconsin 53706 (United States)
Publication Date:
OSTI Identifier:
22402490
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; FILMS; NANOSTRUCTURES; POLYAMIDES; RAMAN SPECTROSCOPY; SILICON; STRAINS; THERMODYNAMIC PROPERTIES; X-RAY DIFFRACTION