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Title: Ultraviolet-enhanced light emitting diode employing individual ZnO microwire with SiO{sub 2} barrier layers

This paper details the fabrication of n-ZnO single microwire (SMW)-based high-purity ultraviolet light-emitting diodes (UV-LEDs) with an added SiO{sub 2} barrier layer on the p-Si substrate. However, the current-voltage (I-V) curve exhibited non-ideal rectifying characteristics. Under forward bias, both UV and visible emissions could be detected by electroluminescence (EL) measurement. When bias voltage reached 60 V at room temperature, a UV emission spike occurred at 390 nm originating from the n-ZnO SMW. Compared with the EL spectrum of the n-ZnO SMW/p-Si heterojunction device without the SiO{sub 2} barrier layer, we saw improved UV light extraction efficiency from the current-blocking effect of the SiO{sub 2} layer. The intense UV emission in the n-ZnO SMW/SiO{sub 2}/p-Si heterojunction indicated that the SiO{sub 2} barrier layer can restrict the movement of electrons as expected and result in effective electron-hole recombination in ZnO SMW.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ; ; ; ; ; ;  [1]
  1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)
  2. (China)
  3. State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022 (China)
  4. State Key Laboratory of Bioelectronics, Southeast University, Nanjing 210096 (China)
Publication Date:
OSTI Identifier:
22402489
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DEPLETION LAYER; ELECTRIC CONDUCTIVITY; ELECTROLUMINESCENCE; ELECTRONS; HETEROJUNCTIONS; LIGHT EMITTING DIODES; RECOMBINATION; SILICA; SILICON OXIDES; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; ULTRAVIOLET RADIATION; ZINC OXIDES