Ultraviolet-enhanced light emitting diode employing individual ZnO microwire with SiO{sub 2} barrier layers
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)
- State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022 (China)
- State Key Laboratory of Bioelectronics, Southeast University, Nanjing 210096 (China)
This paper details the fabrication of n-ZnO single microwire (SMW)-based high-purity ultraviolet light-emitting diodes (UV-LEDs) with an added SiO{sub 2} barrier layer on the p-Si substrate. However, the current-voltage (I-V) curve exhibited non-ideal rectifying characteristics. Under forward bias, both UV and visible emissions could be detected by electroluminescence (EL) measurement. When bias voltage reached 60 V at room temperature, a UV emission spike occurred at 390 nm originating from the n-ZnO SMW. Compared with the EL spectrum of the n-ZnO SMW/p-Si heterojunction device without the SiO{sub 2} barrier layer, we saw improved UV light extraction efficiency from the current-blocking effect of the SiO{sub 2} layer. The intense UV emission in the n-ZnO SMW/SiO{sub 2}/p-Si heterojunction indicated that the SiO{sub 2} barrier layer can restrict the movement of electrons as expected and result in effective electron-hole recombination in ZnO SMW.
- OSTI ID:
- 22402489
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Reverse-bias-driven dichromatic electroluminescence of n-ZnO wire arrays/p-GaN film heterojunction light-emitting diodes
Fairly pure ultraviolet electroluminescence from ZnO-based light-emitting devices