Origin of p-type conductivity of Sb-doped ZnO nanorods and the local structure around Sb ions

Journal Article · Mon May 25 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4921761· OSTI ID:22402488

Liang, J. K.; Chuang, P. Y.; Kuo, C. L.; Huang, S. Y. ^[1]; Chan, T. S. ^[2]; Huang, J. C. A., ^[1]

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1. Department of Physics, National Cheng Kung University, Tainan 701, Taiwan (China)
2. National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan (China)

To probe the origin of p-type conductivity in Sb-doped ZnO, a careful and detailed synchrotron radiation study was performed. The extended X-ray absorption fine structure and X-ray photoelectron spectroscopy investigations provided the evidence for the formation of the complex defects comprising substitution Sb ions at Zn sites (Sb{sub Zn}) and Zn vacancies within the Sb-doped ZnO lattice. Such complex defects result in the increases of Sb-O coordination number and the Sb valence and thereby lead to the p-type conductivity of Sb-doped ZnO. The back-gate field-effect-transistors based on single nanorod of Sb-doped ZnO were constructed, and the stable p-type conduction behavior was confirmed.

• OSTI ID: 22402488
• Journal Information: Applied Physics Letters, Vol. 106, Issue 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIMONY IONS
DOPED MATERIALS
FIELD EFFECT TRANSISTORS
NANOSTRUCTURES
SYNCHROTRON RADIATION
VACANCIES
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC OXIDES