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Title: Origin of p-type conductivity of Sb-doped ZnO nanorods and the local structure around Sb ions

To probe the origin of p-type conductivity in Sb-doped ZnO, a careful and detailed synchrotron radiation study was performed. The extended X-ray absorption fine structure and X-ray photoelectron spectroscopy investigations provided the evidence for the formation of the complex defects comprising substitution Sb ions at Zn sites (Sb{sub Zn}) and Zn vacancies within the Sb-doped ZnO lattice. Such complex defects result in the increases of Sb-O coordination number and the Sb valence and thereby lead to the p-type conductivity of Sb-doped ZnO. The back-gate field-effect-transistors based on single nanorod of Sb-doped ZnO were constructed, and the stable p-type conduction behavior was confirmed.
Authors:
; ;  [1] ; ; ;  [2] ;  [3] ;  [2] ;  [4] ;  [4]
  1. School of Materials Science and Engineering and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei 230009, Anhui (China)
  2. Department of Physics, National Cheng Kung University, Tainan 701, Taiwan (China)
  3. National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan (China)
  4. (China)
Publication Date:
OSTI Identifier:
22402488
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANTIMONY IONS; DOPED MATERIALS; FIELD EFFECT TRANSISTORS; NANOSTRUCTURES; SYNCHROTRON RADIATION; VACANCIES; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES