Origin of p-type conductivity of Sb-doped ZnO nanorods and the local structure around Sb ions
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan (China)
- National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan (China)
To probe the origin of p-type conductivity in Sb-doped ZnO, a careful and detailed synchrotron radiation study was performed. The extended X-ray absorption fine structure and X-ray photoelectron spectroscopy investigations provided the evidence for the formation of the complex defects comprising substitution Sb ions at Zn sites (Sb{sub Zn}) and Zn vacancies within the Sb-doped ZnO lattice. Such complex defects result in the increases of Sb-O coordination number and the Sb valence and thereby lead to the p-type conductivity of Sb-doped ZnO. The back-gate field-effect-transistors based on single nanorod of Sb-doped ZnO were constructed, and the stable p-type conduction behavior was confirmed.
- OSTI ID:
- 22402488
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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