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Title: Thermal effects on transverse domain wall dynamics in magnetic nanowires

Abstract

Magnetic domain walls are proposed as data carriers in future spintronic devices, whose reliability depends on a complete understanding of the domain wall motion. Applications based on an accurate positioning of domain walls are inevitably influenced by thermal fluctuations. In this letter, we present a micromagnetic study of the thermal effects on this motion. As spin-polarized currents are the most used driving mechanism for domain walls, we have included this in our analysis. Our results show that at finite temperatures, the domain wall velocity has a drift and diffusion component, which are in excellent agreement with the theoretical values obtained from a generalized 1D model. The drift and diffusion component are independent of each other in perfect nanowires, and the mean square displacement scales linearly with time and temperature.

Authors:
; ; ;  [1]; ;  [2];  [3];  [4]
  1. Department of Electrical Energy, Systems and Automation, Ghent University, 9000 Gent (Belgium)
  2. Department of Solid State Sciences, Ghent University, 9000 Gent (Belgium)
  3. COMP Centre of Excellence and Helsinki Institute of Physics, Department of Applied Physics, Aalto University School of Science, P.O. Box 11100, FI-00076 Aalto (Finland)
  4. Istituto Nazionale di Ricerca Metrologica, Strada delle Cacce 91, 10135 Torino (Italy)
Publication Date:
OSTI Identifier:
22402460
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRONIC EQUIPMENT; MAGNETIC MATERIALS; MAGNETIC MOMENTS; MAGNETIC STORAGE DEVICES; NANOWIRES; SPIN ORIENTATION; TEMPERATURE DEPENDENCE

Citation Formats

Leliaert, J., E-mail: jonathan.leliaert@ugent.be, Department of Solid State Sciences, Ghent University, 9000 Gent, Van de Wiele, B., Vandermeulen, J., Coene, A., Dupré, L., Vansteenkiste, A., Waeyenberge, B. Van, Laurson, L., Durin, G., and ISI Foundation, Via Alassio 11/c, 10126 Torino. Thermal effects on transverse domain wall dynamics in magnetic nanowires. United States: N. p., 2015. Web. doi:10.1063/1.4921421.
Leliaert, J., E-mail: jonathan.leliaert@ugent.be, Department of Solid State Sciences, Ghent University, 9000 Gent, Van de Wiele, B., Vandermeulen, J., Coene, A., Dupré, L., Vansteenkiste, A., Waeyenberge, B. Van, Laurson, L., Durin, G., & ISI Foundation, Via Alassio 11/c, 10126 Torino. Thermal effects on transverse domain wall dynamics in magnetic nanowires. United States. https://doi.org/10.1063/1.4921421
Leliaert, J., E-mail: jonathan.leliaert@ugent.be, Department of Solid State Sciences, Ghent University, 9000 Gent, Van de Wiele, B., Vandermeulen, J., Coene, A., Dupré, L., Vansteenkiste, A., Waeyenberge, B. Van, Laurson, L., Durin, G., and ISI Foundation, Via Alassio 11/c, 10126 Torino. 2015. "Thermal effects on transverse domain wall dynamics in magnetic nanowires". United States. https://doi.org/10.1063/1.4921421.
@article{osti_22402460,
title = {Thermal effects on transverse domain wall dynamics in magnetic nanowires},
author = {Leliaert, J., E-mail: jonathan.leliaert@ugent.be and Department of Solid State Sciences, Ghent University, 9000 Gent and Van de Wiele, B. and Vandermeulen, J. and Coene, A. and Dupré, L. and Vansteenkiste, A. and Waeyenberge, B. Van and Laurson, L. and Durin, G. and ISI Foundation, Via Alassio 11/c, 10126 Torino},
abstractNote = {Magnetic domain walls are proposed as data carriers in future spintronic devices, whose reliability depends on a complete understanding of the domain wall motion. Applications based on an accurate positioning of domain walls are inevitably influenced by thermal fluctuations. In this letter, we present a micromagnetic study of the thermal effects on this motion. As spin-polarized currents are the most used driving mechanism for domain walls, we have included this in our analysis. Our results show that at finite temperatures, the domain wall velocity has a drift and diffusion component, which are in excellent agreement with the theoretical values obtained from a generalized 1D model. The drift and diffusion component are independent of each other in perfect nanowires, and the mean square displacement scales linearly with time and temperature.},
doi = {10.1063/1.4921421},
url = {https://www.osti.gov/biblio/22402460}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 106,
place = {United States},
year = {Mon May 18 00:00:00 EDT 2015},
month = {Mon May 18 00:00:00 EDT 2015}
}