Time constant of defect relaxation in ion-irradiated 3C-SiC
Abstract
Above room temperature, the buildup of radiation damage in SiC is a dynamic process governed by the mobility and interaction of ballistically generated point defects. Here, we study the dynamics of radiation defects in 3C-SiC bombarded at 100 °C with 500 keV Ar ions, with the total ion dose split into a train of equal pulses. Damage–depth profiles are measured by ion channeling for a series of samples irradiated under identical conditions except for different durations of the passive part of the beam cycle. Results reveal an effective defect relaxation time constant of ∼3 ms (for second order kinetics) and a dynamic annealing efficiency of ∼40% for defects in both Si and C sublattices. This demonstrates a crucial role of dynamic annealing at elevated temperatures and provides evidence of the strong coupling of defect accumulation processes in the two sublattices of 3C-SiC.
- Authors:
-
- Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)
- Department of Nuclear Engineering, Texas A and M University, College Station, Texas 77843 (United States)
- Publication Date:
- OSTI Identifier:
- 22402456
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 106; Journal Issue: 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; ARGON IONS; CRYSTAL LATTICES; ION BEAMS; IRRADIATION; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; PULSES; RELAXATION TIME; SILICON CARBIDES
Citation Formats
Wallace, J. B., Department of Nuclear Engineering, Texas A and M University, College Station, Texas 77843, Bayu Aji, L. B., Kucheyev, S. O., and Shao, L. Time constant of defect relaxation in ion-irradiated 3C-SiC. United States: N. p., 2015.
Web. doi:10.1063/1.4921471.
Wallace, J. B., Department of Nuclear Engineering, Texas A and M University, College Station, Texas 77843, Bayu Aji, L. B., Kucheyev, S. O., & Shao, L. Time constant of defect relaxation in ion-irradiated 3C-SiC. United States. https://doi.org/10.1063/1.4921471
Wallace, J. B., Department of Nuclear Engineering, Texas A and M University, College Station, Texas 77843, Bayu Aji, L. B., Kucheyev, S. O., and Shao, L. 2015.
"Time constant of defect relaxation in ion-irradiated 3C-SiC". United States. https://doi.org/10.1063/1.4921471.
@article{osti_22402456,
title = {Time constant of defect relaxation in ion-irradiated 3C-SiC},
author = {Wallace, J. B. and Department of Nuclear Engineering, Texas A and M University, College Station, Texas 77843 and Bayu Aji, L. B. and Kucheyev, S. O. and Shao, L.},
abstractNote = {Above room temperature, the buildup of radiation damage in SiC is a dynamic process governed by the mobility and interaction of ballistically generated point defects. Here, we study the dynamics of radiation defects in 3C-SiC bombarded at 100 °C with 500 keV Ar ions, with the total ion dose split into a train of equal pulses. Damage–depth profiles are measured by ion channeling for a series of samples irradiated under identical conditions except for different durations of the passive part of the beam cycle. Results reveal an effective defect relaxation time constant of ∼3 ms (for second order kinetics) and a dynamic annealing efficiency of ∼40% for defects in both Si and C sublattices. This demonstrates a crucial role of dynamic annealing at elevated temperatures and provides evidence of the strong coupling of defect accumulation processes in the two sublattices of 3C-SiC.},
doi = {10.1063/1.4921471},
url = {https://www.osti.gov/biblio/22402456},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 106,
place = {United States},
year = {Mon May 18 00:00:00 EDT 2015},
month = {Mon May 18 00:00:00 EDT 2015}
}
Works referencing / citing this record:
Comparative study of radiation defect dynamics in 3C-SiC by X-ray diffraction, Raman scattering, and ion channeling
journal, December 2018
- Bayu Aji, L. B.; Stavrou, E.; Wallace, J. B.
- Applied Physics A, Vol. 125, Issue 1
Impact of pre-existing disorder on radiation defect dynamics in Si
journal, August 2019
- Wallace, J. B.; Bayu Aji, L. B.; Shao, L.
- Scientific Reports, Vol. 9, Issue 1
Radiation defect dynamics in SiC with pre-existing defects
journal, June 2019
- Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O.
- Journal of Applied Physics, Vol. 125, Issue 23
Dynamic annealing in Ge studied by pulsed ion beams
journal, October 2017
- Wallace, J. B.; Bayu Aji, L. B.; Shao, L.
- Scientific Reports, Vol. 7, Issue 1
Fractal analysis of collision cascades in pulsed-ion-beam-irradiated solids
journal, December 2017
- Wallace, J. B.; Aji, L. B. Bayu; Shao, L.
- Scientific Reports, Vol. 7, Issue 1
Impact of pre-existing disorder on radiation defect dynamics in Si
journal, August 2019
- Wallace, J. B.; Bayu Aji, L. B.; Shao, L.
- Scientific Reports, Vol. 9, Issue 1