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Title: Oxide 2D electron gases as a route for high carrier densities on (001) Si

Two dimensional electron gases (2DEGs) formed at the interfaces of oxide heterostructures draw considerable interest owing to their unique physics and potential applications. Growing such heterostructures on conventional semiconductors has the potential to integrate their functionality with semiconductor device technology. We demonstrate 2DEGs on a conventional semiconductor by growing GdTiO{sub 3}-SrTiO{sub 3} on silicon. Structural analysis confirms the epitaxial growth of heterostructures with abrupt interfaces and a high degree of crystallinity. Transport measurements show the conduction to be an interface effect, ∼9 × 10{sup 13} cm{sup −2} electrons per interface. Good agreement is demonstrated between the electronic behavior of structures grown on Si and on an oxide substrate, validating the robustness of this approach to bridge between lab-scale samples to a scalable, technologically relevant materials system.
Authors:
; ; ;  [1] ;  [2] ; ;  [1] ;  [2] ;  [1] ;  [2] ;  [2]
  1. Center for Research on Interface Structures and Phenomena, Yale University, New Haven, Connecticut 06511 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22402450
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARRIER DENSITY; ELECTRON GAS; EPITAXY; GADOLINIUM COMPOUNDS; INTERFACES; OXIDES; SEMICONDUCTOR DEVICES; SILICON; STRONTIUM TITANATES; SUBSTRATES; TITANIUM OXIDES