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Title: Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb

Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An absorption layer composition of In{sub 0.28}Ga{sub 0.72}As{sub 0.25}Sb{sub 0.75} allowed for lattice matching to GaSb and cut-off wavelengths of 2.9 μm at 250 K and 3.0 μm at room temperature. Arrhenius plots of the dark current density showed diffusion limited dark currents approaching those expected for optimized HgCdTe-based detectors. Specific detectivity figures of around 7×10{sup 10} Jones and 1×10{sup 10} Jones were calculated, for 240 K and room temperature, respectively. Significantly, these devices could support focal plane arrays working at higher operating temperatures.
Authors:
; ;  [1] ;  [2] ; ;  [3] ;  [2] ;  [4] ; ;  [5]
  1. Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom)
  2. Amethyst Research Ltd., Kelvin Campus, West of Scotland Science Park, Glasgow G20 0SP (United Kingdom)
  3. Amethyst Research, Inc., 123 Case Circle, Ardmore, Oklahoma 73401 (United States)
  4. (United States)
  5. Defence Science and Technology Laboratory, Porton Down, Salisbury, Wiltshire SP4 0JQ (United Kingdom)
Publication Date:
OSTI Identifier:
22402448
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 20; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; ANTIMONY ALLOYS; ARSENIC; CRYSTAL LATTICES; CURRENT DENSITY; GALLIUM ALLOYS; GALLIUM ANTIMONIDES; INDIUM ALLOYS; INFRARED SPECTRA; LAYERS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K